Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Tip pachet
DPAK (TO-252)
Dimensiune celula
IPD200N15N3 G
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Lungime
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,51
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,987
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 2,51
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,987
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 2,51 | € 25,10 |
20 - 40 | € 1,96 | € 19,60 |
50 - 90 | € 1,83 | € 18,30 |
100 - 240 | € 1,69 | € 16,90 |
250+ | € 1,57 | € 15,70 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Tip pachet
DPAK (TO-252)
Dimensiune celula
IPD200N15N3 G
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Lungime
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C