Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPD068N10N3 G
Tip pachet
TO-252
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Latime
7.47mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
2.41mm
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,297
Buc. (Intr-un pachet de 10) (cu TVA)
10
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPD068N10N3 G
Tip pachet
TO-252
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Latime
7.47mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
2.41mm