Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Dimensiune celula
CoolMOS CE
Tip pachet
TO-220 FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
11.3mm
Latime
4.9mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Temperatura minima de lucru
-40 °C
Forward Diode Voltage
0.9V
Inaltime
16.27mm
Tara de origine
China
Detalii produs
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,38
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,642
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 1,38
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,642
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,38 | € 6,90 |
50 - 120 | € 1,19 | € 5,95 |
125 - 245 | € 1,10 | € 5,50 |
250 - 495 | € 1,02 | € 5,10 |
500+ | € 0,95 | € 4,75 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Dimensiune celula
CoolMOS CE
Tip pachet
TO-220 FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
11.3mm
Latime
4.9mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Temperatura minima de lucru
-40 °C
Forward Diode Voltage
0.9V
Inaltime
16.27mm
Tara de origine
China
Detalii produs
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.