Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
333 W
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Dimensiuni
16.03 x 21.1 x 5.16mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-40 °C
Tara de origine
Germany
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,68
Each (In a Tube of 30) (fara TVA)
€ 4,379
Each (In a Tube of 30) (cu TVA)
30
€ 3,68
Each (In a Tube of 30) (fara TVA)
€ 4,379
Each (In a Tube of 30) (cu TVA)
30
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
333 W
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Dimensiuni
16.03 x 21.1 x 5.16mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-40 °C
Tara de origine
Germany
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.