Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
60 V
Tip pachet
SC-59
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
3.7 nC @ 5 V
Latime
1.6mm
Inaltime
1.1mm
Dimensiune celula
BSR606N
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.15V
Automotive Standard
AEC-Q101
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
60 V
Tip pachet
SC-59
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
3.7 nC @ 5 V
Latime
1.6mm
Inaltime
1.1mm
Dimensiune celula
BSR606N
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.15V
Automotive Standard
AEC-Q101