Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Tip pachet
TDSON
Dimensiune celula
BSC036NE7NS3 G
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+150 °C
Latime
6.35mm
Number of Elements per Chip
1
Lungime
5.35mm
Typical Gate Charge @ Vgs
63.4 nC @ 10 V
Inaltime
1.1mm
Forward Diode Voltage
1.2V
Temperatura minima de lucru
-55 °C
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P.O.A.
5000
P.O.A.
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Tip pachet
TDSON
Dimensiune celula
BSC036NE7NS3 G
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+150 °C
Latime
6.35mm
Number of Elements per Chip
1
Lungime
5.35mm
Typical Gate Charge @ Vgs
63.4 nC @ 10 V
Inaltime
1.1mm
Forward Diode Voltage
1.2V
Temperatura minima de lucru
-55 °C