BGB741L7ESDE6327XTSA1 Infineon, RF Amplifier Low Noise, 21.5 dB 5 GHz, 7-Pin TSLP

Nr. stoc RS: 110-7770PProducator: InfineonCod de producator: BGB741L7ESDE6327XTSA1
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Specificatii

Marca

Infineon

Amplifier Type

Low Noise

Typical Power Gain

21.5 dB

Typical Noise Figure

1.8dB

Numar canale pe cip

1

Maximum Operating Frequency

5 GHz

Montare

Surface Mount

Tip pachet

TSLP

Numar pini

7

Dimensiuni

2 x 1.3 x 0.35mm

Inaltime

0.35mm

Lungime

2mm

Serie

BGB741L7ESD

Temperatura maxima de lucru

+150 °C

Maximum Operating Supply Voltage

4 V

Latime

1.3mm

Minimum Operating Supply Voltage

1.8 V

Detalii produs

RF Amplifiers, Infineon

Infineon’s range of RF Low Noise Amplifier (LNA) covers MMIC, GPS, Gain and PCS as well as Broadband types and Glonass front end modules. The RF amplifier’s feature low power consumption, high data-rate reception and may have ESD protection and are used in mobile devices. The GPS/GLONASS modules are widely used in Personal Navigation Devices (PND), Tablets, Cameras and mobile phones.

Radio Frequency (RF) Amplifiers, Infineon

Informatii indisponibile despre stoc

Incercati din nou mai tarziu

Informatii indisponibile despre stoc

P.O.A.

BGB741L7ESDE6327XTSA1 Infineon, RF Amplifier Low Noise, 21.5 dB 5 GHz, 7-Pin TSLP
Selectati tipul de ambalaj

Impachetare pentru productie (Rola)

Selectati tipul de ambalaj

Standard - each

Disponibil in multiplu de 15.

Productie -

Disponibil in multiplu de 15.

Recomandat pentru comenzi cu cantitati mari. Articolele sunt gata ambalate pentru a fi introduse in utilaje, permitandu-va sa imbunatatiti eficienta productiei.

15

Disponibil in multiplu de 15
15P.O.A.
30P.O.A.
45P.O.A.
60P.O.A.
75P.O.A.
90P.O.A.
105P.O.A.
120P.O.A.
135P.O.A.
150P.O.A.
165P.O.A.
180P.O.A.
195P.O.A.
210P.O.A.
225P.O.A.

P.O.A.

BGB741L7ESDE6327XTSA1 Infineon, RF Amplifier Low Noise, 21.5 dB 5 GHz, 7-Pin TSLP
Informatii indisponibile despre stoc
Selectati tipul de ambalaj

Impachetare pentru productie (Rola)

Selectati tipul de ambalaj

Standard - each

Disponibil in multiplu de 15.

Productie -

Disponibil in multiplu de 15.

Recomandat pentru comenzi cu cantitati mari. Articolele sunt gata ambalate pentru a fi introduse in utilaje, permitandu-va sa imbunatatiti eficienta productiei.

15

Disponibil in multiplu de 15
15P.O.A.
30P.O.A.
45P.O.A.
60P.O.A.
75P.O.A.
90P.O.A.
105P.O.A.
120P.O.A.
135P.O.A.
150P.O.A.
165P.O.A.
180P.O.A.
195P.O.A.
210P.O.A.
225P.O.A.

Documente tehnice

Specificatii

Marca

Infineon

Amplifier Type

Low Noise

Typical Power Gain

21.5 dB

Typical Noise Figure

1.8dB

Numar canale pe cip

1

Maximum Operating Frequency

5 GHz

Montare

Surface Mount

Tip pachet

TSLP

Numar pini

7

Dimensiuni

2 x 1.3 x 0.35mm

Inaltime

0.35mm

Lungime

2mm

Serie

BGB741L7ESD

Temperatura maxima de lucru

+150 °C

Maximum Operating Supply Voltage

4 V

Latime

1.3mm

Minimum Operating Supply Voltage

1.8 V

Detalii produs

RF Amplifiers, Infineon

Infineon’s range of RF Low Noise Amplifier (LNA) covers MMIC, GPS, Gain and PCS as well as Broadband types and Glonass front end modules. The RF amplifier’s feature low power consumption, high data-rate reception and may have ESD protection and are used in mobile devices. The GPS/GLONASS modules are widely used in Personal Navigation Devices (PND), Tablets, Cameras and mobile phones.

Radio Frequency (RF) Amplifiers, Infineon