Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
60 mA
Maximum Collector Emitter Voltage
15 V
Tip pachet
SOT-343
Montare
Surface Mount
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
1.5 V
Maximum Operating Frequency
25 GHz
Numar pini
4
Number of Elements per Chip
1
Dimensiuni
2 x 1.25 x 0.8mm
Temperatura maxima de lucru
+150 °C
Detalii produs
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Standard
50
P.O.A.
Standard
50
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
60 mA
Maximum Collector Emitter Voltage
15 V
Tip pachet
SOT-343
Montare
Surface Mount
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
1.5 V
Maximum Operating Frequency
25 GHz
Numar pini
4
Number of Elements per Chip
1
Dimensiuni
2 x 1.25 x 0.8mm
Temperatura maxima de lucru
+150 °C
Detalii produs