Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
6 V
Tip pachet
SOT-143
Montare
Surface Mount
Numar pini
4
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
900 mV
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
600 mV
Maximum Collector Cut-off Current
5µA
Inaltime
0.9mm
Latime
1.3mm
Maximum Power Dissipation
300 mW
Dimensiuni
2.9 x 1.3 x 0.9mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Detalii produs
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
6 V
Tip pachet
SOT-143
Montare
Surface Mount
Numar pini
4
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
900 mV
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
600 mV
Maximum Collector Cut-off Current
5µA
Inaltime
0.9mm
Latime
1.3mm
Maximum Power Dissipation
300 mW
Dimensiuni
2.9 x 1.3 x 0.9mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Detalii produs