Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
0.01mA
Dimensiuni
2.9 x 1.3 x 0.9mm
Inaltime
0.9mm
Latime
1.3mm
Maximum Power Dissipation
360 mW
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Tara de origine
China
Detalii produs
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,05
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,06
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,05
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,06
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
0.01mA
Dimensiuni
2.9 x 1.3 x 0.9mm
Inaltime
0.9mm
Latime
1.3mm
Maximum Power Dissipation
360 mW
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Tara de origine
China
Detalii produs