Documente tehnice
Specificatii
Automotive Standard
AEC-Q101
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Numar pini
3
Temperatura minima de lucru
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.3V
Timp montare
Through Hole
Dimensiune celula
AUIRF
Minimum Gate Threshold Voltage
3V
Temperatura maxima de lucru
+175 °C
Maximum Drain Source Voltage
150 V
Maximum Gate Threshold Voltage
5V
Maximum Gate Source Voltage
±20 V
Tip pachet
TO-262
Inaltime
4.83mm
Lungime
10.67mm
Latime
9.65mm
Maximum Power Dissipation
375 W
Maximum Continuous Drain Current
99 A
Marca
InfineonMaximum Drain Source Resistance
12.1 mΩ
Typical Gate Charge @ Vgs
77 nC @ 10 V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Standard
5
P.O.A.
Standard
5
Documente tehnice
Specificatii
Automotive Standard
AEC-Q101
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Numar pini
3
Temperatura minima de lucru
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.3V
Timp montare
Through Hole
Dimensiune celula
AUIRF
Minimum Gate Threshold Voltage
3V
Temperatura maxima de lucru
+175 °C
Maximum Drain Source Voltage
150 V
Maximum Gate Threshold Voltage
5V
Maximum Gate Source Voltage
±20 V
Tip pachet
TO-262
Inaltime
4.83mm
Lungime
10.67mm
Latime
9.65mm
Maximum Power Dissipation
375 W
Maximum Continuous Drain Current
99 A
Marca
InfineonMaximum Drain Source Resistance
12.1 mΩ
Typical Gate Charge @ Vgs
77 nC @ 10 V