Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
60 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
17.2 @ 10 V nC
Inaltime
0.58mm
Dimensiune celula
DMP
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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P.O.A.
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P.O.A.
10000
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
60 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
17.2 @ 10 V nC
Inaltime
0.58mm
Dimensiune celula
DMP
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs