Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerDI3333-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Lungime
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
3.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
0.78mm
Dimensiune celula
DMP
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,39
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,464
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,39
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,464
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Tip pachet
PowerDI3333-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Lungime
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
3.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
0.78mm
Dimensiune celula
DMP
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs