Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
9.1 A
Maximum Drain Source Voltage
12 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
28.4 nC @ 5 V
Latime
2.05mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.58mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Impachetare pentru productie (Rola)
25
P.O.A.
Impachetare pentru productie (Rola)
25
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
9.1 A
Maximum Drain Source Voltage
12 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
28.4 nC @ 5 V
Latime
2.05mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.58mm
Tara de origine
China
Detalii produs