Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
40 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Latime
3.95mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
4.95mm
Typical Gate Charge @ Vgs
19.1 @ 10 V nC
Inaltime
1.5mm
Serie
DMN
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Automotive Standard
AEC-Q101
Detalii produs
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
40 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Latime
3.95mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
4.95mm
Typical Gate Charge @ Vgs
19.1 @ 10 V nC
Inaltime
1.5mm
Serie
DMN
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Automotive Standard
AEC-Q101
Detalii produs