Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
U-DFN2020
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
56 nC @ 10 V
Lungime
2.05mm
Dimensiune celula
DMN2011UFDF
Temperatura minima de lucru
-55 °C
Inaltime
0.58mm
Forward Diode Voltage
1.2V
Detalii produs
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,50
Buc. (Intr-un pachet de 20) (cu TVA)
20
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Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,50
Buc. (Intr-un pachet de 20) (cu TVA)
20
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
U-DFN2020
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
56 nC @ 10 V
Lungime
2.05mm
Dimensiune celula
DMN2011UFDF
Temperatura minima de lucru
-55 °C
Inaltime
0.58mm
Forward Diode Voltage
1.2V
Detalii produs