Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
12 (State) A, 15 (Steady) A
Maximum Drain Source Voltage
12 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
0.58mm
Tara de origine
China
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
12 (State) A, 15 (Steady) A
Maximum Drain Source Voltage
12 V
Tip pachet
U-DFN2020
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Temperatura maxima de lucru
+150 °C
Lungime
2.05mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Latime
2.05mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
0.58mm
Tara de origine
China