Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Tip pachet
PowerPAK 8 x 8
Dimensiune celula
E Series
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
135 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
202 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Lungime
8.1mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
8.1mm
Forward Diode Voltage
1.2V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Tara de origine
Taiwan, Province Of China
Detalii produs
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
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1 - 9 | € 5,98 |
10 - 49 | € 4,34 |
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250+ | € 3,04 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Tip pachet
PowerPAK 8 x 8
Dimensiune celula
E Series
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
135 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
202 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Lungime
8.1mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
8.1mm
Forward Diode Voltage
1.2V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Tara de origine
Taiwan, Province Of China
Detalii produs
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).