Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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€ 0,34
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,405
Buc. (Intr-un pachet de 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 75 | € 0,34 | € 8,50 |
100 - 975 | € 0,19 | € 4,75 |
1000 - 2975 | € 0,13 | € 3,25 |
3000+ | € 0,11 | € 2,75 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.