Documente tehnice
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,12
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,143
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,12
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,143
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs