Documente tehnice
Specificatii
Marca
NXPTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-143B
Timp montare
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Numar pini
4
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+175 °C
Tara de origine
China
Detalii produs
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
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P.O.A.
10
P.O.A.
10
Documente tehnice
Specificatii
Marca
NXPTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-143B
Timp montare
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Numar pini
4
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+175 °C
Tara de origine
China
Detalii produs