Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Tip pachet
SOT-666
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Latime
1.3mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.6mm
Detalii produs
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,31
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,369
Buc. (Intr-un pachet de 50) (cu TVA)
50
€ 0,31
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,369
Buc. (Intr-un pachet de 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 100 | € 0,31 | € 15,50 |
150 - 250 | € 0,19 | € 9,50 |
300 - 550 | € 0,18 | € 9,00 |
600 - 1150 | € 0,18 | € 9,00 |
1200+ | € 0,17 | € 8,50 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Tip pachet
SOT-666
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Latime
1.3mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.6mm
Detalii produs