Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
415 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.9mm
Typical Gate Charge @ Vgs
252 nC @ 10 V
Width
5.3mm
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Height
20.95mm
Tara de origine
Philippines
Detalii produs
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii despre stoc temporar indisponibile.
Incercati din nou mai tarziu
€ 14,08
Each (In a Tube of 30) (fara TVA)
€ 16,755
Each (In a Tube of 30) (cu TVA)
30
€ 14,08
Each (In a Tube of 30) (fara TVA)
€ 16,755
Each (In a Tube of 30) (cu TVA)
30
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 30 | € 14,08 | € 422,40 |
60 - 60 | € 12,93 | € 387,90 |
90+ | € 12,04 | € 361,20 |
Idei. creează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
- Vizualizați și contribuiți cu conținutul site-ului web și forumuri
- Descărcați modele 3D, scheme și amprente de la peste un milion de produse
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
415 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.9mm
Typical Gate Charge @ Vgs
252 nC @ 10 V
Width
5.3mm
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Height
20.95mm
Tara de origine
Philippines
Detalii produs
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.