N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF

Nr. stoc RS: 124-9022Producator: InfineonCod de producator: IRFP4668PBF
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

200 V

Tip pachet

TO-247AC

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Lungime

15.87mm

Typical Gate Charge @ Vgs

161 nC @ 10 V

Temperatura maxima de lucru

+175 °C

Latime

5.31mm

Number of Elements per Chip

1

Inaltime

20.7mm

Dimensiune celula

HEXFET

Temperatura minima de lucru

-55 °C

Tara de origine

Mexico

Detalii produs

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Informatii despre stoc temporar indisponibile.

Incercati din nou mai tarziu

Informatii despre stoc temporar indisponibile.

€ 3,73

Each (In a Tube of 25) (fara TVA)

€ 4,439

Each (In a Tube of 25) (cu TVA)

N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF

€ 3,73

Each (In a Tube of 25) (fara TVA)

€ 4,439

Each (In a Tube of 25) (cu TVA)

N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF
Informatii despre stoc temporar indisponibile.

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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

200 V

Tip pachet

TO-247AC

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Lungime

15.87mm

Typical Gate Charge @ Vgs

161 nC @ 10 V

Temperatura maxima de lucru

+175 °C

Latime

5.31mm

Number of Elements per Chip

1

Inaltime

20.7mm

Dimensiune celula

HEXFET

Temperatura minima de lucru

-55 °C

Tara de origine

Mexico

Detalii produs

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.