N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 Infineon IPW65R080CFDAFKSA1

Nr. stoc RS: 124-8815Producator: InfineonCod de producator: IPW65R080CFDAFKSA1
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Specificatii

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

391 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

167 nC @ 10 V

Height

21.1mm

Series

CoolMOS CFD

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Tara de origine

China

Detalii produs

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Informatii despre stoc temporar indisponibile.

Incercati din nou mai tarziu

Informatii despre stoc temporar indisponibile.

€ 10,24

Each (In a Tube of 30) (fara TVA)

€ 12,186

Each (In a Tube of 30) (cu TVA)

N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 Infineon IPW65R080CFDAFKSA1

€ 10,24

Each (In a Tube of 30) (fara TVA)

€ 12,186

Each (In a Tube of 30) (cu TVA)

N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 Infineon IPW65R080CFDAFKSA1
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

391 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

167 nC @ 10 V

Height

21.1mm

Series

CoolMOS CFD

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Tara de origine

China

Detalii produs

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.