N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 Infineon IPW65R019C7FKSA1

Nr. stoc RS: 124-8812Producator: InfineonCod de producator: IPW65R019C7FKSA1
brand-logo

Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

446 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

21.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

215 nC @ 10 V

Height

5.21mm

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Tara de origine

China

Detalii produs

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Informatii despre stoc temporar indisponibile.

Incercati din nou mai tarziu

Informatii despre stoc temporar indisponibile.

€ 19,33

Each (In a Tube of 30) (fara TVA)

€ 23,003

Each (In a Tube of 30) (cu TVA)

N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 Infineon IPW65R019C7FKSA1

€ 19,33

Each (In a Tube of 30) (fara TVA)

€ 23,003

Each (In a Tube of 30) (cu TVA)

N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 Infineon IPW65R019C7FKSA1
Informatii despre stoc temporar indisponibile.

Idei. creează. Colaborează

ÎNSCRIE-TE GRATIS

Fara taxe ascunse!

design-spark
design-spark
  • Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
  • Vizualizați și contribuiți cu conținutul site-ului web și forumuri
  • Descărcați modele 3D, scheme și amprente de la peste un milion de produse
Click aici pentru a afla mai multe

Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

446 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

21.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

215 nC @ 10 V

Height

5.21mm

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Tara de origine

China

Detalii produs

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.