Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Dimensiune celula
CoolMOS CE
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Inaltime
2.41mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.85V
Detalii produs
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,78
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,928
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,78
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,928
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 0,78 | € 7,80 |
50 - 490 | € 0,71 | € 7,10 |
500 - 990 | € 0,51 | € 5,10 |
1000 - 2490 | € 0,42 | € 4,20 |
2500+ | € 0,40 | € 4,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Dimensiune celula
CoolMOS CE
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Inaltime
2.41mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.85V
Detalii produs
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.