N-Channel MOSFET, 18.1 A, 550 V, 3-Pin DPAK Infineon IPD50R280CEAUMA1

Nr. stoc RS: 130-0896Producator: InfineonCod de producator: IPD50R280CEAUMA1
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Specificatii

Channel Type

N

Maximum Continuous Drain Current

18.1 A

Maximum Drain Source Voltage

550 V

Tip pachet

DPAK (TO-252)

Timp montare

Surface Mount

Numar pini

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

119 W

Maximum Gate Source Voltage

-30 V, +30 V

Latime

6.22mm

Number of Elements per Chip

1

Temperatura maxima de lucru

+150 °C

Lungime

6.73mm

Typical Gate Charge @ Vgs

32.6 nC @ 10 V

Inaltime

2.41mm

Dimensiune celula

CoolMOS CE

Temperatura minima de lucru

-55 °C

Forward Diode Voltage

0.85V

Detalii produs

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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N-Channel MOSFET, 18.1 A, 550 V, 3-Pin DPAK Infineon IPD50R280CEAUMA1

P.O.A.

N-Channel MOSFET, 18.1 A, 550 V, 3-Pin DPAK Infineon IPD50R280CEAUMA1
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

18.1 A

Maximum Drain Source Voltage

550 V

Tip pachet

DPAK (TO-252)

Timp montare

Surface Mount

Numar pini

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

119 W

Maximum Gate Source Voltage

-30 V, +30 V

Latime

6.22mm

Number of Elements per Chip

1

Temperatura maxima de lucru

+150 °C

Lungime

6.73mm

Typical Gate Charge @ Vgs

32.6 nC @ 10 V

Inaltime

2.41mm

Dimensiune celula

CoolMOS CE

Temperatura minima de lucru

-55 °C

Forward Diode Voltage

0.85V

Detalii produs

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.