Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
4500pF
Temperatura maxima de lucru
+175 °C
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 6,78
Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,068
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 6,78
Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,068
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 6,78 | € 67,80 |
20 - 40 | € 6,20 | € 62,00 |
50 - 90 | € 5,89 | € 58,90 |
100 - 190 | € 5,44 | € 54,40 |
200+ | € 5,07 | € 50,70 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
4500pF
Temperatura maxima de lucru
+175 °C
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.