Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
62 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
1800pF
Temperatura maxima de lucru
+175 °C
Energy Rating
0.88mJ
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,55
Buc. (Intr-un pachet de 10) (fara TVA)
€ 4,224
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 3,55
Buc. (Intr-un pachet de 10) (fara TVA)
€ 4,224
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 3,55 | € 35,50 |
20 - 40 | € 3,24 | € 32,40 |
50 - 90 | € 3,08 | € 30,80 |
100 - 240 | € 2,91 | € 29,10 |
250+ | € 2,69 | € 26,90 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
62 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
1800pF
Temperatura maxima de lucru
+175 °C
Energy Rating
0.88mJ
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.