Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
187 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
1630pF
Temperatura maxima de lucru
+175 °C
Energy Rating
2.1mJ
Tara de origine
China
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 4,03
Each (In a Tube of 30) (fara TVA)
€ 4,796
Each (In a Tube of 30) (cu TVA)
30
€ 4,03
Each (In a Tube of 30) (fara TVA)
€ 4,796
Each (In a Tube of 30) (cu TVA)
30
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 30 | € 4,03 | € 120,90 |
60+ | € 3,66 | € 109,80 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
187 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
1630pF
Temperatura maxima de lucru
+175 °C
Energy Rating
2.1mJ
Tara de origine
China
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.