Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Height
1.6mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Detalii produs
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii despre stoc temporar indisponibile.
Incercati din nou mai tarziu
€ 0,40
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,476
Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 0,40
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,476
Buc. (Pe o rola de 1000) (cu TVA)
1000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
1000 - 1000 | € 0,40 | € 400,00 |
2000 - 2000 | € 0,37 | € 370,00 |
3000+ | € 0,34 | € 340,00 |
Idei. creează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
- Vizualizați și contribuiți cu conținutul site-ului web și forumuri
- Descărcați modele 3D, scheme și amprente de la peste un milion de produse
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.5mm
Height
1.6mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Detalii produs
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.