Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
25 V
Tip pachet
TISON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
+20 V
Latime
6.1mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V, 7.7 nC @ 4.5 V
Inaltime
1.1mm
Dimensiune celula
OptiMOS
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
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P.O.A.
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
25 V
Tip pachet
TISON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
+20 V
Latime
6.1mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V, 7.7 nC @ 4.5 V
Inaltime
1.1mm
Dimensiune celula
OptiMOS
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.