N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC0901NSATMA1

Nr. stoc RS: 133-9798Producator: InfineonCod de producator: BSC0901NSATMA1
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Tip pachet

TDSON

Timp montare

Surface Mount

Numar pini

8

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Temperatura maxima de lucru

+150 °C

Latime

6.35mm

Number of Elements per Chip

1

Lungime

5.35mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Forward Diode Voltage

1V

Inaltime

1.1mm

Dimensiune celula

OptiMOS

Temperatura minima de lucru

-55 °C

Tara de origine

Malaysia

Detalii produs

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Informatii despre stoc temporar indisponibile.

Incercati din nou mai tarziu

Informatii despre stoc temporar indisponibile.

€ 1,34

Buc. (Intr-un pachet de 5) (fara TVA)

€ 1,595

Buc. (Intr-un pachet de 5) (cu TVA)

N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC0901NSATMA1

€ 1,34

Buc. (Intr-un pachet de 5) (fara TVA)

€ 1,595

Buc. (Intr-un pachet de 5) (cu TVA)

N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC0901NSATMA1
Informatii despre stoc temporar indisponibile.

Cumpara in pachete mari

CantitatePret unitarPer Pachet
5 - 45€ 1,34€ 6,70
50 - 120€ 1,17€ 5,85
125 - 245€ 1,08€ 5,40
250 - 495€ 1,00€ 5,00
500+€ 0,93€ 4,65

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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Tip pachet

TDSON

Timp montare

Surface Mount

Numar pini

8

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Temperatura maxima de lucru

+150 °C

Latime

6.35mm

Number of Elements per Chip

1

Lungime

5.35mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Forward Diode Voltage

1V

Inaltime

1.1mm

Dimensiune celula

OptiMOS

Temperatura minima de lucru

-55 °C

Tara de origine

Malaysia

Detalii produs

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.