Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Temperatura maxima de lucru
+150 °C
Latime
6.35mm
Number of Elements per Chip
1
Lungime
5.35mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Forward Diode Voltage
1V
Inaltime
1.1mm
Dimensiune celula
OptiMOS
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Incercati din nou mai tarziu
€ 1,34
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,595
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,34
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,595
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,34 | € 6,70 |
50 - 120 | € 1,17 | € 5,85 |
125 - 245 | € 1,08 | € 5,40 |
250 - 495 | € 1,00 | € 5,00 |
500+ | € 0,93 | € 4,65 |
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Temperatura maxima de lucru
+150 °C
Latime
6.35mm
Number of Elements per Chip
1
Lungime
5.35mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Forward Diode Voltage
1V
Inaltime
1.1mm
Dimensiune celula
OptiMOS
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.