Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.35mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Inaltime
1.1mm
Dimensiune celula
OptiMOS 3
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,47
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,749
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,47
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,749
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,47 | € 7,35 |
50 - 120 | € 1,25 | € 6,25 |
125 - 245 | € 1,17 | € 5,85 |
250 - 495 | € 1,08 | € 5,40 |
500+ | € 0,99 | € 4,95 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.35mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Inaltime
1.1mm
Dimensiune celula
OptiMOS 3
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.