Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Dimensiune celula
OptiMOS 5
Tip pachet
SuperSO8 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
36 nC @ 10 V
Lungime
5.49mm
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.62V
Detalii produs
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,56
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,046
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 2,56
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,046
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 2,56 | € 12,80 |
25 - 45 | € 2,19 | € 10,95 |
50 - 120 | € 2,02 | € 10,10 |
125 - 245 | € 1,88 | € 9,40 |
250+ | € 1,72 | € 8,60 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Dimensiune celula
OptiMOS 5
Tip pachet
SuperSO8 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
36 nC @ 10 V
Lungime
5.49mm
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.62V
Detalii produs
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.