N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409

Nr. stoc RS: 145-8807Producator: InfineonCod de producator: AUIRFB8409
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

195 A, 409 A

Maximum Drain Source Voltage

40 V

Tip pachet

TO-220AB

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Latime

3.43mm

Number of Elements per Chip

1

Temperatura maxima de lucru

+175 °C

Transistor Material

Si

Lungime

10.67mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Inaltime

9.02mm

Dimensiune celula

COOLiRFET

Temperatura minima de lucru

-55 °C

Tara de origine

Mexico

Detalii produs

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409

P.O.A.

N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

195 A, 409 A

Maximum Drain Source Voltage

40 V

Tip pachet

TO-220AB

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Latime

3.43mm

Number of Elements per Chip

1

Temperatura maxima de lucru

+175 °C

Transistor Material

Si

Lungime

10.67mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Inaltime

9.02mm

Dimensiune celula

COOLiRFET

Temperatura minima de lucru

-55 °C

Tara de origine

Mexico

Detalii produs

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.