N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-220AB Infineon AUIRFB4410

Nr. stoc RS: 145-8803Producator: InfineonCod de producator: AUIRFB4410
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

100 V

Tip pachet

TO-220AB

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Latime

4.83mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

120 nC @ 10 V

Temperatura maxima de lucru

+175 °C

Transistor Material

Si

Lungime

10.67mm

Inaltime

16.51mm

Dimensiune celula

HEXFET

Temperatura minima de lucru

-55 °C

Tara de origine

Mexico

Detalii produs

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-220AB Infineon AUIRFB4410

P.O.A.

N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-220AB Infineon AUIRFB4410
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

100 V

Tip pachet

TO-220AB

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Latime

4.83mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

120 nC @ 10 V

Temperatura maxima de lucru

+175 °C

Transistor Material

Si

Lungime

10.67mm

Inaltime

16.51mm

Dimensiune celula

HEXFET

Temperatura minima de lucru

-55 °C

Tara de origine

Mexico

Detalii produs

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.