Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Inaltime
1.5mm
Dimensiune celula
HEXFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Tara de origine
Malaysia
Detalii produs
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Incercati din nou mai tarziu
€ 1,07
Buc. (Pe o rola de 4000) (fara TVA)
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Buc. (Pe o rola de 4000) (cu TVA)
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€ 1,07
Buc. (Pe o rola de 4000) (fara TVA)
€ 1,273
Buc. (Pe o rola de 4000) (cu TVA)
4000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Inaltime
1.5mm
Dimensiune celula
HEXFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Tara de origine
Malaysia
Detalii produs
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.